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19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
Features
Sub-harmonic Receiver Integrated LNA, LO Buffer, Image Reject Mixer +2.0 dBm LO Drive Level 2.3 dB Noise Figure 20.0 dB Image Rejection 100% On-Wafer RF, DC and Noise Figure Testing 100% Visual Inspection to MIL-STD-883 Method 2010
Mimix Broadband's 19.0-26.0 GHz GaAs MMIC receiver has a noise figure of 2.5 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.
Chip Device Layout
R1005
General Description
Absolute Maximum Ratings
Supply Voltage (Vd) Supply Current (Id1,Id2) Gate Bias Voltage (Vg) Input Power (RF Pin) Storage Temperature (Tstg) Operating Temperature (Ta) Channel Temperature (Tch)
+4.5 VDC 180, 165 mA +0.3 VDC 0.0 dBm -65 to +165 OC -55 to MTTF Table 3 MTTF Table 3
(3) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25o C)
Parameter Frequency Range (RF) Upper Side Band Frequency Range (RF) Lower Side Band Frequency Range (LO) Frequency Range (IF) Input Return Loss RF (S11)3 Small Signal Conversion Gain RF/IF (S21)2,3 LO Input Drive (PLO) Image Rejection2,3 Noise Figure (NF)2,3 Isolation LO/RF @ LOx1/LOx2 Input Third Order Intercept (IIP3)1,2 Drain Bias Voltage (Vd1) Drain Bias Voltage (Vd2) Gate Bias Voltage (Vg1,2) Supply Current (Id1) (Vd1=3.5V, Vg=-0.3V Typical) Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)
Units GHz GHz GHz GHz dB dB dBm dBc dB dB dBm VDC VDC VDC mA mA Min. 19.0 19.0 8.0 DC 7.5 15.0 -1.2 Typ. 20.0 9.5 +2.0 20.0 2.3 65.0 -7.0 +4.0 +4.0 -0.3 130 116
Max. 26.0 26.0 14.5 3.0 -12.0 12.0 2.9 +4.5 +4.5 +0.1 155 140
(1) Measured using constant current. (2) Measured using LO Input drive level of +2.0 dBm. (3) Max and Min are specified for RF=20 to 24 GHz
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
R1005
Receiver Measurements
XR1005 USB Conversion Gain (1398 devices)
12 12
XR1005 LSB Conversion Gain (1398 devices)
10
10
8
8
Conversion Gain (dB)
6
Conversion Gain (dB)
Max Mean Min
6
4
4
2
2
Max Mean Min
20 21 22 23 24
0 20 21 22 23 24
0
RF at USB (GHz)
[IF = 2GHz]
RF at LSB (GHz)
[IF = 2GHz]
XR1005 USB Image Rejection (1398 devices)
0 0
XR1005 LSB Image Rejection (1398 devices)
-5
-5
-10
-10
Image Rejection (dB)
-15
Image Rejection (dB)
-15
-20
-20
-25
-25
-30
-30
-35
Max Mean
-35
Max Mean
-40 20 21 22 23 24
-40 20 21 22 23 24
RF at USB (GHz)
[IF = 2GHz]
RF at LSB (GHz)
[IF = 2GHz]
RF Input Return Loss (1398 devices)
0
XR1005 USB Noise Figure (1398 devices)
5 4.5
-5
4 3.5
-10
Noise Figure (dB)
3 2.5 2 1.5 1
S11 (dB)
-15
-20
-25
Max Mean
0.5 0
+3sigma Mean -3sigma
-30 20 21 22 23 24
20
21
22
23
24
RF (GHz)
RF at USB (GHz)
[IF = 2GHz]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 2 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
R1005
Receiver Measurements (cont.)
XR1005 LSB Noise Figure (1398 devices)
5
Typical OIP3 and IIP3 at USB, LO Pin = -2, 0 and +2dBm
4.5 4 3.5
10 8 6 4 2 OIP3 OIP3, LO = -2dBm OIP3, LO = 0dBm OIP3, LO = +2dBm IIP3 IIP3, LO = -2dBm IIP3, LO = 0dBm IIP3, LO = 2dBm
3 2.5 2 1.5 1 0.5 0 20 21 22 23 24
OIP3 and IIP3 (dBm)
+3sigma Mean -3sigma
0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 16 17 18 19 20 21 22 23 24 25 26 27 28
Noise Figure (dB)
RF USB (GHz)
[IF = 3GHz]
RF at LSB (GHz)
[IF = 2GHz]
Typical OIP3 and IIP3 at LSB, LO Pin = -2, 0 and +2dBm
10 8 6 4 2 OIP3 OIP3, LO = -2dBm 14 OIP3, LO = 0dBm OIP3, LO = 2dBm IIP3 IIP3, LO = -2dBm IIP3, LO = 0dBm IIP3, LO = 2dBm 4 2 16 17 18 19 20 21 22 23 24 25 26 27 28 0 -40 -38 -36 18 16 20
USB Conversion Gain vs. Pin, IF = 3GHz, LO = +2dBm
21 GHz 25 GHz
OIP3 and IIP3 (dBm)
0
-6 -8 -10 -12 -14 -16 -18 -20
USB CG (dB)
-2 -4
12 10 8 6
RF LSB (GHz)
[IF = 3GHz]
-34
-32
-30
-28
-26
-24
-22
-20
-18
-16
-14
-12
-10
-8
-6
-4
Pin (dBm)
18-26 GHz USB Conversion Gain (1398 devices)
12
LSB Conversion Gain vs. Pin, IF = 3GHz, LO = +2dBm
20
10
18 21 GHz 16 25 GHz
8
LSB CG (dB)
12 10 8 6 4 2 0 -40 -38 -36 -34 -32 -30 -28 -26 -24 -22 -20 -18 -16 -14 -12 -10 -8 -6 -4
Conversion Gain (dB)
14
6
4
2
Max Mean Min
Pin (dBm)
0 18 19 20 21 22 23 24 25 26
RF at USB (GHz)
[IF = 2GHz]
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 3 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
R1005
Receiver Measurements (cont.)
18-26 GHz LSB Conversion Gain (1398 devices)
12 0
18-26 GHz USB Image Rejection (1398 devices)
-5 10 -10 8
Conversion Gain (dB)
Image Rejection (dB)
Max Mean Min
18 19 20 21 22 23 24 25 26
-15
6
-20
-25
4
-30 2
-35
Max Mean
0
-40 18 19 20 21 22 23 24 25 26
RF at LSB (GHz)
[IF = 2GHz]
RF at USB (GHz)
[IF = 2GHz]
18-26 GHz LSB Image Rejection (1398 devices)
0 5 4.5 4 -10 3.5
18-26 GHz USB Noise Figure (1398 devices)
-5
Image Rejection (dB)
Noise Figure (dB)
-15
3 2.5 2 1.5
-20
-25
-30 1 -35
Max Mean
0.5 0
+3sigma Mean -3sigma
-40 18 19 20 21 22 23 24 25 26
18
19
20
21
22
23
24
25
26
RF at LSB (GHz)
[IF = 2GHz]
RF at USB (GHz)
[IF = 2GHz]
18-26 GHz LSB Noise Figure (1398 devices)
5 4.5 -5 4 3.5 -10 0
18-26 GHz RF Input Return Loss (1398 devices)
Noise Figure (dB)
3
S11 (dB)
+3sigma Mean -3sigma
2.5 2
-15
-20 1.5 1 -25 0.5 0 18 19 20 21 22 23 24 25 26
Max Mean
-30 18 20 22 24 26
RF at LSB (GHz)
[IF = 2GHz]
RF (GHz)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 4 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
Mechanical Drawing
1.945 (0.077) 1.608 (0.063)
1
1.678 (0.066)
2
2.478 (0.098)
3
3.278 (0.129)
4
R1005
5
1.488 (0.059)
0.0 0.0
10
9
8
7
6
1.678 (0.066)
2.478 (0.098)
3.077 (0.121) 3.278 (0.129)
3.677 3.970 (0.145) (0.156)
(Note: Engineering designator is 22REC0393) Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad. Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold All DC/IF Bond Pads are 0.100 x 0.100 (0.004 x 0.004). All RF Bond Pads are 0.100 x 0.200 (0.004 x 0.008). Bond pad centers are approximately 0.109 (0.004) from the edge of the chip. Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 4.787 mg. Bond Pad #1 (RF In) Bond Pad #2 (Vd1) Bond Pad #3 (IF1) Bond Pad #4 (Vd2) Bond Pad #5 (LO) Bond Pad #6 (Vg2b) Bond Pad #7 (Vg2) Bond Pad #8 (Vg2a) Bond Pad #9 (IF2) Bond Pad #10 (Vg1)
Bias Arrangement
Bypass Capacitors - See App Note [2]
Vd1 IF1
2 3 4
Vd2
Vd1 RF
5
Vd2
IF1
RF
1
LO
XR1005
LO
10
9
8
7
6
Vg1
IF2
Vg2
IF2 Vg1 Vg2
Page 5 of 9
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
R1005
App Note [1] Biasing - As shown in the bonding diagram, this device is operated by separately biasing Vd1 and Vd2 with Vd1=4.0V, Id1=130mA and Vd2=4.0V, Id2=116mA. It is also recommended to use active biasing to keep the currents constant as the RF power and temperature vary; this gives the most reproducible results. Depending on the supply voltage available and the power dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (Vd1,2 and Vg1,2) needs to have DC bypass capacitance (~100-200 pF) as close to the device as possible. Additional DC bypass capacitance (~0.01 uF) is also recommended.
MTTF Table (TBD)
These numbers were calculated based on accelerated life test information and thermal model analysis received from the fabricating foundry.
Backplate Temperature 55 deg Celsius 75 deg Celsius 95 deg Celsius
Channel Temperature deg Celsius deg Celsius deg Celsius
Rth
MTTF Hours
FITs
C/W C/W C/W
E+ E+ E+
E+ E+ E+
Bias Conditions: Vd1=4.0V, Vd2=4.0V, Id1=130 mA, Id2=116 mA
Typical Application
XR1005
BPF RF IN 21.2-23.6 GHz LNA IR Mixer Coupler
IF Out 2 GHz
AGC Control
LO(+2.0dBm) 9.6-10.8 GHz (USB Operation) 11.6-12.8 GHz (LSB Operation)
Mimix Broadband MMIC-based 19.0-26.0 GHz Receiver Block Diagram
(Changing LO and IF frequencies as required allows design to operate as high as 26.0 GHz)
Mimix Broadband's 19.0-26.0 GHz XR1005 GaAs MMIC Receiver can be used in saturated radio applications and linear modulation schemes up to 16 QAM. The receiver can be used in upper and lower sideband applications from 19.0-26.0 GHz.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 6 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
R1005
App Note [3] USB/LSB Selection -
LSB
USB
For Upper Side Band operation (USB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the USB signal will reside on the isolated port. The input port must be loaded with 50 ohms.
IF2
IF1
For Lower Side Band operation (LSB): With IF1 and IF2 connected to the direct port (0) and coupled port (90) respectively as shown in the diagram, the LSB signal will reside on the input port. The isolated port must be loaded with 50 ohms.
An alternate method of Selection of USB or LSB:
USB
LSB
In Phase Combiner
In Phase Combiner
-90
o
-90o
IF2
IF1
IF2
IF1
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
Block Diagram
R1005
Vd2
Device Schematic
Vd1
IF1
LNA RF In RF In RF Out
IR Mixer RF LO LO Out
LO Buffer LO In LO
Vg1
IF2
Vg2
LO Buffer Schematic
Vd2
R=14.4 R=7.1
R=14.4
R=15.0
R=10.0
R=10.0
LO In
LO Out to IR Mixer
R=11.4
R=25.0
R=25.0
R=60.0 R=850.0 R=850.0 R=60.0
Vg2a Vg2 Vg2b
LNA Schematic
Vd1
"LNA arm"
VG_1 VD_1 VG_2 VD_2
R=25.0
RF In RF In
RF Out
R=25.0 R=50.0 R=8.3 R=9.6 R=25.0
VG_1 VD_1 VG_2 VD_2
R=12.8 R=9.6 R=6.5 R=6.5 R=19.2 R=9.6
R=50.0
RF Out to IR Mixer
"LNA arm"
Vg1 Arm Vg1
Vd1 Arm
Vg2 Arm
Vd2 Arm
R=25.0
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.
19.0-26.0 GHz GaAs MMIC Receiver
April 2006 - Rev 10-Apr-06
Handling and Assembly Information
Do not ingest. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures.
R1005
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures:
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should be clean and flat. If using conductive epoxy, recommended epoxies are Ablestick 84-1LMI or 84-1LMIT cured in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the die. An epoxy fillet should be visible around the total die periphery. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. The gold-tin eutectic (80% Au 20% Sn) has a melting point of approximately 280 C (Note: Gold Germanium should be avoided). The work station temperature should be 310 C + 10 C. Exposure to these extreme temperatures should be kept to minimum. The collet should be heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during placement. Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2% elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible. Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099 Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 9 of 9
Characteristic Data and Specifications are subject to change without notice. (c)2006 Mimix Broadband, Inc. Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept their obligation to be compliant with U.S. Export Laws.

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